PART |
Description |
Maker |
MT55L64L32P1 MT55L128L18P |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出,静态RAM) 128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出,静态RAM) 128K的18.3V的I / O的ZBT SRAM的(处理器,3.3V的输输出,静态内存)
|
Micron Technology, Inc.
|
MT58L128L18FT-10 MT58L128L18FT-7.5 MT58L128V18F MT |
2MB: 128K X 18, 64K X 32/36 FLOW-THROUGH SYNCBURST SRAM
|
MICRON[Micron Technology]
|
MT55L128L18F1 |
128K x 18, 3.3V I/O,ZBT SRAM(2Mb,3.3V输入/输出,静态RAM)
|
Micron Technology, Inc.
|
MT58L128L18F |
128K x 18, Flow-Through SyncBurst SRAM(2Mb,流通式同步脉冲静态RAM)
|
Micron Technology, Inc.
|
IS61NVP6436A-200TQI IS61NVP12818A-250TQ IS61NVP128 |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 3.1 ns, PQFP100 64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM 128K X 18 ZBT SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc. Integrated Silicon Solution...
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N02L1618C1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
N02L163WN1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
|
N02L63W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
ON Semiconductor
|
N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM 2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
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